insulated gate bipolar transistor (igbt) -ag真人平台官方


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insulated gate bipolar transistor (igbt)

insulated gate bipolar transistor (igbt)

abb’s igbt power modules are available from 1700 to 6500 volt as single igbt, dual / phase-leg igbt, chopper and dual diode modules. the high-power hipak igbt modules feature low losses combined with soft-switching performance and record-breaking safe operating area (soa). the newly introduced 62pak fast switching medium-power igbt modules feature lowest switching losses, full 175 °c operation with full square soa and standard package allowing drop-in replacement.

part numbervoltage 
ces (v)
typepackage  plecs model
1.7 kv

1700 2 x 150phase leg igbt62pak
17002 x 200phase leg igbt62pak
 17002 x 300phase leg igbt62pak
17002 x 800dual igbthipak
 #17002 x 1000phase leg igbtlinpak
17001600single igbthipak
17001800single igbthipak
*17002400single igbthipak
1700 2400single igbthipak
1700 3600single igbthipak
1700 3600single diodehipak
2.5 kv

25001500single igbthipak
3.3 kv

33002 x 250phase leg igbthipak
33002 x 500phase leg diodehipak
33002 x 500dual igbthipak
3300 800single igbt hipak
33002 x 1000dual diodehipak
33001000single igbthipak
33002 x 1200dual diodehipak
33001200single igbthipak
33001200single igbthipak 
3300 1500single igbthipak
4.5 kv

45002 x 150phase leg igbthipak  
45002 x 600phase leg diodehipak  
45002 x 650dual diodehipak 
4500650single igbthipak 
4500800single igbthipak 
45002 x 1200dual diodehipak 
45001200single igbthipak 
45001200single igbthipak 
6.5 kv

6500400single igbthipak 
6500500single igbthipak 
65002 x 600dual diodehipak  
6500600single igbthipak 
6500750single igbthipak 

* not for new designs 
# preliminary